BSS192P

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BSS192P Manufacturer: INFINEON Low Voltage MOSFETs
Partnumber	Manufacturer	Quantity	Availability
BSS192P	INFINEON	3000	In Stock
Description and Introduction Low Voltage MOSFETs The BSS192P is a P-channel MOSFET manufactured by Infineon. Here are its key specifications: - Drain-Source Voltage (V_DS): -20 V - Gate-Source Voltage (V_GS): ±12 V - Continuous Drain Current (I_D): -1.7 A - Pulsed Drain Current (I_DM): -6.8 A - Power Dissipation (P_tot): 1.1 W - On-Resistance (R_DS(on)): 0.28 Ω (max) at V_GS = -4.5 V - Threshold Voltage (V_GS(th)): -0.4 to -1.5 V - Total Gate Charge (Q_g): 4.3 nC (typ) - Package: SOT-223 These specifications are based on Infineon's datasheet for the BSS192P.

Manufacturer: INFINEON

Low Voltage MOSFETs

Partnumber

Manufacturer

Quantity

Availability

BSS192P

INFINEON

3000

In Stock

Description and Introduction

Low Voltage MOSFETs The BSS192P is a P-channel MOSFET manufactured by Infineon. Here are its key specifications:

- **Drain-Source Voltage (V_DS)**: -20 V
- **Gate-Source Voltage (V_GS)**: ±12 V
- **Continuous Drain Current (I_D)**: -1.7 A
- **Pulsed Drain Current (I_DM)**: -6.8 A
- **Power Dissipation (P_tot)**: 1.1 W
- **On-Resistance (R_DS(on))**: 0.28 Ω (max) at V_GS = -4.5 V
- **Threshold Voltage (V_GS(th))**: -0.4 to -1.5 V
- **Total Gate Charge (Q_g)**: 4.3 nC (typ)
- **Package**: SOT-223

These specifications are based on Infineon's datasheet for the BSS192P.

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BSS192P from INFINEON

BSS192P

Description and Introduction

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We offer highly competitive channel pricing. Get in touch for details.