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BSS138PW from NXP,NXP Semiconductors

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15.869ms

BSS138PW

Manufacturer: NXP

60 V, 360 mA N-channel Trench MOSFET

Partnumber Manufacturer Quantity Availability
BSS138PW NXP 30000 In Stock

Description and Introduction

60 V, 360 mA N-channel Trench MOSFET The BSS138PW is a N-channel logic level enhancement mode Field-Effect Transistor (FET) manufactured by NXP. Here are its key specifications:

- **Drain-Source Voltage (VDS)**: 50 V  
- **Gate-Source Voltage (VGS)**: ±20 V  
- **Continuous Drain Current (ID)**: 220 mA  
- **Power Dissipation (Ptot)**: 1.25 W  
- **On-State Resistance (RDS(on))**: 3.5 Ω (max) at VGS = 10 V, ID = 200 mA  
- **Threshold Voltage (VGS(th))**: 1.3 V (min), 2.5 V (max)  
- **Package**: SOT-323 (SC-70)  

It is designed for low-voltage, high-speed switching applications.

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