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BSS138P from NXP,NXP Semiconductors

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15.625ms

BSS138P

Manufacturer: NXP

60 V, 360 mA N-channel Trench MOSFET

Partnumber Manufacturer Quantity Availability
BSS138P NXP 33000 In Stock

Description and Introduction

60 V, 360 mA N-channel Trench MOSFET The BSS138P is a P-channel MOSFET manufactured by NXP. Here are its key specifications:

- **Drain-Source Voltage (VDS)**: -50V  
- **Gate-Source Voltage (VGS)**: ±20V  
- **Continuous Drain Current (ID)**: -0.22A  
- **Power Dissipation (Ptot)**: 0.36W  
- **On-State Resistance (RDS(on))**: 3.5Ω (max) at VGS = -10V, ID = -0.1A  
- **Threshold Voltage (VGS(th))**: -1V to -3V  
- **Package**: SOT-23 (3-pin)  
- **Operating Temperature Range**: -55°C to +150°C  

The device is designed for low-power switching applications.

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