IC Phoenix logo

Home ›  B  › B28 > BSS123LT1G--

BSS123LT1G-- from ON,ON Semiconductor

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

4.028ms

BSS123LT1G--

Manufacturer: ON

TMOS FET Transistor

Partnumber Manufacturer Quantity Availability
BSS123LT1G--,BSS123LT1G ON 36000 In Stock

Description and Introduction

TMOS FET Transistor The BSS123LT1G is an N-channel MOSFET manufactured by ON Semiconductor. Here are its key specifications:

- **Drain-Source Voltage (VDS):** 100V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** 170mA  
- **Power Dissipation (PD):** 360mW  
- **On-Resistance (RDS(on)):** 6Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1V to 2.5V  
- **Package:** SOT-23  
- **Type:** Enhancement Mode  
- **Operating Temperature Range:** -55°C to +150°C  

This MOSFET is commonly used in switching and amplification applications.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips