IC Phoenix logo

Home ›  B  › B28 > BSS123LT1

BSS123LT1 from ONSEMI,ON Semiconductor

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

0.000ms

BSS123LT1

Manufacturer: ONSEMI

TMOS FET Transistor(N-Channel)

Partnumber Manufacturer Quantity Availability
BSS123LT1 ONSEMI 31 In Stock

Description and Introduction

TMOS FET Transistor(N-Channel) The BSS123LT1 is a N-channel MOSFET manufactured by ONSEMI. Here are its key specifications:  

- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 170mA  
- **Power Dissipation (PD):** 360mW  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 6Ω (max) at VGS = 10V, ID = 50mA  
- **Threshold Voltage (VGS(th)):** 1V to 2.5V  
- **Package:** SOT-23 (TO-236)  
- **Operating Temperature Range:** -55°C to +150°C  

This information is based on ONSEMI's datasheet for the BSS123LT1.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips