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BSR56 from PHILIPS

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15.625ms

BSR56

Manufacturer: PHILIPS

N-Channel Low-Frequency Low-Noise Amplifier

Partnumber Manufacturer Quantity Availability
BSR56 PHILIPS 2630 In Stock

Description and Introduction

N-Channel Low-Frequency Low-Noise Amplifier The BSR56 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by PHILIPS (now NXP Semiconductors). Below are its key specifications:

- **Type**: NPN transistor  
- **Maximum Collector-Base Voltage (VCB)**: 80V  
- **Maximum Collector-Emitter Voltage (VCE)**: 80V  
- **Maximum Emitter-Base Voltage (VEB)**: 5V  
- **Maximum Collector Current (IC)**: 1A  
- **Power Dissipation (Ptot)**: 1W  
- **DC Current Gain (hFE)**: 40-160 (varies with operating conditions)  
- **Transition Frequency (fT)**: 50MHz  
- **Operating Temperature Range**: -65°C to +150°C  
- **Package**: TO-39 (metal can package)  

These specifications are based on PHILIPS/NXP datasheets. For exact performance under specific conditions, refer to the official documentation.

Partnumber Manufacturer Quantity Availability
BSR56 FAIRCHIL 1389 In Stock

Description and Introduction

N-Channel Low-Frequency Low-Noise Amplifier The BSR56 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are its key specifications:

- **Type**: NPN BJT  
- **Package**: TO-92  
- **Collector-Emitter Voltage (VCEO)**: 30V  
- **Collector-Base Voltage (VCBO)**: 40V  
- **Emitter-Base Voltage (VEBO)**: 5V  
- **Collector Current (IC)**: 500mA  
- **Power Dissipation (PD)**: 625mW  
- **DC Current Gain (hFE)**: 40-250 (at IC = 150mA, VCE = 1V)  
- **Transition Frequency (fT)**: 200MHz  
- **Operating Temperature Range**: -55°C to +150°C  

These specifications are based on Fairchild Semiconductor's datasheet for the BSR56 transistor.

Partnumber Manufacturer Quantity Availability
BSR56 FAIRCHILD 4189 In Stock

Description and Introduction

N-Channel Low-Frequency Low-Noise Amplifier The BSR56 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Fairchild Semiconductor. Below are its key specifications:

- **Type**: NPN
- **Collector-Emitter Voltage (VCEO)**: 80V
- **Collector-Base Voltage (VCBO)**: 100V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Continuous Collector Current (IC)**: 1A
- **Power Dissipation (PD)**: 1W
- **DC Current Gain (hFE)**: 40–250 (at IC = 150mA, VCE = 1V)
- **Transition Frequency (fT)**: 50MHz
- **Operating Temperature Range**: -55°C to +150°C
- **Package**: TO-92

These specifications are based on Fairchild Semiconductor's datasheet for the BSR56 transistor.

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