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BSP762T . from Infineon

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BSP762T .

Manufacturer: Infineon

Smart Power High-Side-Switch

Partnumber Manufacturer Quantity Availability
BSP762T .,BSP762T Infineon 50725 In Stock

Description and Introduction

Smart Power High-Side-Switch The **BSP762T** is a **N-channel logic level MOSFET** manufactured by **Infineon Technologies**. Here are its key specifications:

- **Drain-Source Voltage (VDS):** 60 V  
- **Continuous Drain Current (ID):** 6.3 A (at 25°C)  
- **Pulsed Drain Current (IDM):** 25 A  
- **Gate-Source Voltage (VGS):** ±20 V  
- **On-Resistance (RDS(on)):** 85 mΩ (max at VGS = 10 V)  
- **Power Dissipation (PD):** 2.5 W (at 25°C)  
- **Threshold Voltage (VGS(th)):** 1.5 V (typical)  
- **Package:** **SOT-223** (4-pin)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Logic Level Gate Drive:** Yes (fully enhanced at 4.5 V)  

This MOSFET is designed for **switching applications** in power management, DC-DC converters, and motor control.  

(Source: Infineon datasheet)

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