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BSP15 from PHILIPS

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BSP15

Manufacturer: PHILIPS

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Partnumber Manufacturer Quantity Availability
BSP15 PHILIPS 183 In Stock

Description and Introduction

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR The BSP15 is a semiconductor component manufactured by PHILIPS.  

Key specifications of the BSP15 include:  
- **Type**: NPN Darlington Transistor  
- **Package**: TO-220  
- **Maximum Collector-Emitter Voltage (VCEO)**: 60V  
- **Maximum Collector Current (IC)**: 15A  
- **Power Dissipation (Ptot)**: 75W  
- **DC Current Gain (hFE)**: Typically 1000  
- **Operating Temperature Range**: -55°C to +150°C  

This transistor is designed for high-current switching applications.

Partnumber Manufacturer Quantity Availability
BSP15 ZETEON 20000 In Stock

Description and Introduction

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR The BSP15 is a semiconductor component manufactured by ZETEON. Below are the factual specifications from Ic-phoenix technical data files:

- **Manufacturer:** ZETEON  
- **Part Number:** BSP15  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** SOT-223  
- **Collector-Emitter Voltage (VCEO):** 60V  
- **Collector Current (IC):** 1A  
- **Power Dissipation (Ptot):** 1.5W  
- **DC Current Gain (hFE):** 100-250  
- **Transition Frequency (fT):** 150MHz  
- **Operating Temperature Range:** -55°C to +150°C  

These are the confirmed specifications for the BSP15 transistor from ZETEON.

Partnumber Manufacturer Quantity Availability
BSP15 NXP 1000 In Stock

Description and Introduction

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR The BSP15 is a power MOSFET transistor manufactured by NXP. Below are the specifications from Ic-phoenix technical data files:

- **Type**: N-channel enhancement mode MOSFET  
- **Package**: TO-220AB  
- **Drain-Source Voltage (VDSS)**: 150V  
- **Continuous Drain Current (ID)**: 15A  
- **Pulsed Drain Current (IDM)**: 60A  
- **Power Dissipation (Ptot)**: 75W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-State Resistance (RDS(on))**: 0.15Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th))**: 2-4V  
- **Input Capacitance (Ciss)**: 1000pF (typical)  
- **Output Capacitance (Coss)**: 300pF (typical)  
- **Reverse Transfer Capacitance (Crss)**: 50pF (typical)  

These specifications are for reference only and may vary slightly depending on operating conditions. For precise details, consult the official NXP datasheet.

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