BSO104N03S.

15.625ms

BSO104N03S. Manufacturer: INFINEON Low Voltage MOSFETs
Partnumber	Manufacturer	Quantity	Availability
BSO104N03S.,BSO104N03S	INFINEON	12500	In Stock
Description and Introduction Low Voltage MOSFETs The BSO104N03S is a MOSFET manufactured by Infineon Technologies. Below are its key specifications: - Type: N-channel MOSFET - Technology: OptiMOS™ 3 - Drain-Source Voltage (V_DS): 30 V - Continuous Drain Current (I_D): 100 A (at 25°C) - Pulsed Drain Current (I_DM): 400 A - Power Dissipation (P_tot): 200 W - Gate-Source Voltage (V_GS): ±20 V - On-Resistance (R_DS(on)): 1.04 mΩ (max at V_GS = 10 V) - Total Gate Charge (Q_g): 120 nC (typical) - Package: TO-263 (D2PAK) This MOSFET is designed for high-efficiency power switching applications.

Manufacturer: INFINEON

Low Voltage MOSFETs

Partnumber

Manufacturer

Quantity

Availability

BSO104N03S.,BSO104N03S

INFINEON

12500

In Stock

Description and Introduction

Low Voltage MOSFETs The **BSO104N03S** is a MOSFET manufactured by **Infineon Technologies**. Below are its key specifications:

- **Type**: N-channel MOSFET
- **Technology**: OptiMOS™ 3
- **Drain-Source Voltage (V_DS)**: 30 V
- **Continuous Drain Current (I_D)**: 100 A (at 25°C)
- **Pulsed Drain Current (I_DM)**: 400 A
- **Power Dissipation (P_tot)**: 200 W
- **Gate-Source Voltage (V_GS)**: ±20 V
- **On-Resistance (R_DS(on))**: 1.04 mΩ (max at V_GS = 10 V)
- **Total Gate Charge (Q_g)**: 120 nC (typical)
- **Package**: TO-263 (D2PAK)

This MOSFET is designed for high-efficiency power switching applications.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number	Quantity	Target Price($USD)	Email	Contact Person

We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips

Home › B › B27 > BSO104N03S.

BSO104N03S. from INFINEON

BSO104N03S.

Description and Introduction

Request Quotation

We offer highly competitive channel pricing. Get in touch for details.