IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) The BSM75GB170DN2 is a power module manufactured by Infineon. Here are its key specifications:

- **Type**: Dual IGBT module
- **Voltage Rating (V_CES)**: 1700V
- **Current Rating (I_C)**: 75A
- **Configuration**: Half-bridge
- **Package**: Module
- **Technology**: IGBT (Insulated Gate Bipolar Transistor) with diode
- **Switching Frequency**: Suitable for medium-frequency applications
- **Thermal Resistance (R_th(j-c))**: Typically low for efficient heat dissipation
- **Mounting**: Screw or press-fit terminals  

For exact performance characteristics, refer to the official Infineon datasheet.