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BSC750N10NDG from infineon

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16.113ms

BSC750N10NDG

Manufacturer: infineon

OptiMOSTM2 Power-Transistor

Partnumber Manufacturer Quantity Availability
BSC750N10NDG infineon 80000 In Stock

Description and Introduction

OptiMOSTM2 Power-Transistor The BSC750N10NDG is a power MOSFET manufactured by Infineon. Here are its key specifications:

- **Technology**: OptiMOS™ 5
- **Voltage Rating (VDS)**: 100 V
- **Current Rating (ID)**: 750 A (at 25°C)
- **RDS(on)**: 0.85 mΩ (max at VGS = 10 V)
- **Gate-Source Voltage (VGS)**: ±20 V
- **Power Dissipation (PD)**: 830 W (at 25°C)
- **Package**: TO-263-7 (D2PAK-7)
- **Operating Temperature Range**: -55°C to +175°C
- **Avalanche Energy (EAS)**: 4.5 J
- **Gate Charge (Qg)**: 220 nC (typical at VDS = 80 V, VGS = 10 V)

These specifications are based on Infineon's datasheet for the BSC750N10NDG.

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