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BSC119N03S from INFINEON

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BSC119N03S

Manufacturer: INFINEON

OptiMOS®2

Partnumber Manufacturer Quantity Availability
BSC119N03S INFINEON 239 In Stock

Description and Introduction

OptiMOS®2 The BSC119N03S is a power MOSFET manufactured by Infineon Technologies. Here are its key specifications:

- **Type**: N-channel
- **Technology**: OptiMOS™ 3
- **Drain-Source Voltage (VDS)**: 30 V
- **Continuous Drain Current (ID)**: 119 A
- **Pulsed Drain Current (IDM)**: 476 A
- **Power Dissipation (Ptot)**: 294 W
- **RDS(on) (max)**: 1.7 mΩ at VGS = 10 V
- **Gate-Source Voltage (VGS)**: ±20 V
- **Threshold Voltage (VGS(th))**: 2.35 V (typical)
- **Total Gate Charge (Qg)**: 130 nC (typical)
- **Package**: D2PAK (TO-263-3)

These specifications are based on Infineon's datasheet for the BSC119N03S.

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