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BSC119N03S G from INFINEON

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BSC119N03S G

Manufacturer: INFINEON

OptiMOS2 Power-Transistor

Partnumber Manufacturer Quantity Availability
BSC119N03S G,BSC119N03SG INFINEON 1820 In Stock

Description and Introduction

OptiMOS2 Power-Transistor The BSC119N03S G is a power MOSFET manufactured by Infineon. Here are its key specifications:  

- **Manufacturer**: Infineon  
- **Part Number**: BSC119N03S G  
- **Type**: N-channel MOSFET  
- **Technology**: OptiMOS™ 3  
- **Drain-Source Voltage (VDS)**: 30 V  
- **Continuous Drain Current (ID)**: 119 A (at 25°C)  
- **Pulsed Drain Current (IDM)**: 476 A  
- **Power Dissipation (Ptot)**: 294 W (at 25°C)  
- **Gate-Source Voltage (VGS)**: ±20 V  
- **On-Resistance (RDS(on))**: 1.9 mΩ (max at VGS = 10 V)  
- **Threshold Voltage (VGS(th))**: 2.3 V (typical)  
- **Package**: TO-263 (D2PAK)  
- **Operating Temperature Range**: -55°C to +175°C  

This information is based on Infineon's datasheet for the BSC119N03S G.

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