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BSC059N03S G from INFINEON

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15.625ms

BSC059N03S G

Manufacturer: INFINEON

OptiMOS?2 Power-Transistor

Partnumber Manufacturer Quantity Availability
BSC059N03S G,BSC059N03SG INFINEON 475 In Stock

Description and Introduction

OptiMOS?2 Power-Transistor The BSC059N03S G is a power MOSFET manufactured by Infineon. Here are its key specifications:

- **Manufacturer**: Infineon  
- **Part Number**: BSC059N03S G  
- **Type**: N-channel MOSFET  
- **Technology**: OptiMOS™ 3  
- **Drain-Source Voltage (VDS)**: 30 V  
- **Continuous Drain Current (ID)**: 50 A  
- **Pulsed Drain Current (IDM)**: 200 A  
- **On-Resistance (RDS(on))**: 5.9 mΩ (max) at VGS = 10 V  
- **Gate-Source Voltage (VGS)**: ±20 V  
- **Power Dissipation (PD)**: 42 W  
- **Operating Junction Temperature (TJ)**: -55°C to +175°C  
- **Package**: TO-263 (D2PAK)  
- **Mounting Type**: Surface Mount  

This MOSFET is designed for high-efficiency power conversion applications.  

(Source: Infineon datasheet for BSC059N03S G.)

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