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BSC048N025S G from INFINEON

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BSC048N025S G

Manufacturer: INFINEON

OptiMOS?2 Power-Transistor

Partnumber Manufacturer Quantity Availability
BSC048N025S G,BSC048N025SG INFINEON 1000 In Stock

Description and Introduction

OptiMOS?2 Power-Transistor The BSC048N025S G is a power MOSFET manufactured by Infineon. Here are its key specifications:

- **Part Number**: BSC048N025S G  
- **Manufacturer**: Infineon  
- **Technology**: OptiMOS™ 5  
- **Type**: N-channel  
- **Drain-Source Voltage (VDS)**: 25 V  
- **Continuous Drain Current (ID)**: 48 A  
- **Pulsed Drain Current (IDM)**: 192 A  
- **Power Dissipation (Ptot)**: 125 W  
- **RDS(on) (Max)**: 4.8 mΩ at VGS = 10 V  
- **Gate-Source Voltage (VGS)**: ±20 V  
- **Threshold Voltage (VGS(th))**: 2.3 V (typical)  
- **Package**: PG-TDSON-8  

This information is based on Infineon's datasheet for the BSC048N025S G.

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