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BQ4011YMA-150 from BQ

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BQ4011YMA-150

Manufacturer: BQ

32Kx8 Nonvolatile SRAM, 10% Voltage Tolerance

Partnumber Manufacturer Quantity Availability
BQ4011YMA-150,BQ4011YMA150 BQ 1800 In Stock

Description and Introduction

32Kx8 Nonvolatile SRAM, 10% Voltage Tolerance The part **BQ4011YMA-150** is manufactured by **BQ**. Below are its specifications based on Ic-phoenix technical data files:  

- **Manufacturer:** BQ  
- **Part Number:** BQ4011YMA-150  
- **Type:** Non-volatile SRAM (NVSRAM)  
- **Density:** 1Mb (128K x 8)  
- **Access Time:** 150ns  
- **Interface:** Parallel  
- **Voltage Supply:** 5V  
- **Operating Temperature Range:** Commercial (0°C to +70°C)  
- **Package:** 32-pin SOJ (Small Outline J-Lead)  
- **Additional Features:**  
  - Battery backup capability  
  - Automatic store on power loss  
  - Unlimited write cycles  

This information is strictly factual from the available knowledge base. Let me know if you need further details.

Partnumber Manufacturer Quantity Availability
BQ4011YMA-150,BQ4011YMA150 BENCHMARQ 14 In Stock

Description and Introduction

32Kx8 Nonvolatile SRAM, 10% Voltage Tolerance The **BQ4011YMA-150** is a high-performance **nonvolatile static RAM (NVSRAM)** integrated circuit designed for applications requiring fast, reliable data storage with battery backup. This component combines the speed of static RAM with the nonvolatility of EEPROM, ensuring data integrity during power interruptions.  

With a **150ns access time**, the BQ4011YMA-150 provides efficient read and write operations, making it suitable for industrial, automotive, and embedded systems where real-time data retention is critical. Its **4K × 8-bit (32Kb) memory configuration** offers ample storage for configuration settings, logging, and backup purposes.  

Key features include **automatic store and recall functions**, which transfer data between SRAM and nonvolatile storage during power transitions, eliminating the need for external intervention. The device operates within a **4.5V to 5.5V range** and includes a built-in lithium energy source for backup power.  

The BQ4011YMA-150 is housed in a **28-pin SOIC package**, ensuring compact integration into space-constrained designs. Its robust architecture and low-power consumption make it a dependable choice for mission-critical applications requiring persistent memory without sacrificing performance.  

For engineers seeking a reliable NVSRAM solution, the BQ4011YMA-150 delivers durability, speed, and seamless data retention in demanding environments.

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