BLF8G22LS-160BV

Partnumber	Manufacturer	Quantity	Availability
BLF8G22LS-160BV Manufacturer: NXP Power LDMOS transistor
BLF8G22LS-160BV,BLF8G22LS160BV	NXP	120	In Stock
Description and Introduction Power LDMOS transistor The BLF8G22LS-160BV is a power LDMOS transistor manufactured by NXP Semiconductors. Here are its key specifications: - Frequency Range: 1805 - 1880 MHz - Output Power: 160 W - Gain: 17.5 dB (typical) - Efficiency: 45% (typical) - Voltage (VDS): 32 V - Package: SOT1229 - Application: Designed for use in RF power amplifiers, particularly in base stations and other telecommunications infrastructure. This transistor is optimized for high efficiency and linearity in the 1.8 GHz frequency band.
Application Scenarios & Design Considerations Power LDMOS transistor
Alternative Part Number MRF8P23080H --: LDMOS RF power transistor in the same 2.2 GHz class with comparable output power and gain, suitable as a drop-in for similar base station amplifier designs. PTFA220081M --: Wideband LDMOS RF power MOSFET covering the 2.2 GHz band with similar power capability, offering an alternative supplier option. AFT27S006N --: Airfast LDMOS RF power transistor for 2.2 GHz applications with comparable gain and efficiency, usable where slightly lower output power is acceptable.

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BLF8G22LS-160BV from NXP,NXP Semiconductors