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BLF7G27LS-90PG from NXP,NXP Semiconductors

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BLF7G27LS-90PG

Manufacturer: NXP

RF Manual 16th edition

Partnumber Manufacturer Quantity Availability
BLF7G27LS-90PG,BLF7G27LS90PG NXP 12 In Stock

Description and Introduction

RF Manual 16th edition The BLF7G27LS-90PG is a high-power RF LDMOS transistor manufactured by NXP. Here are its key specifications:

- **Frequency Range:** 2.6 GHz to 2.7 GHz  
- **Output Power (P3dB):** 90 W  
- **Gain:** 16 dB (typical)  
- **Efficiency:** 40% (typical)  
- **Drain-Source Voltage (VDS):** 32 V  
- **Operating Class:** AB  
- **Package:** Air-cavity ceramic  
- **Matching:** Input and output pre-matched for ease of integration  
- **Applications:** Base stations, RF power amplifiers  

This transistor is designed for high-performance RF amplification in the 2.6 GHz to 2.7 GHz range.

Application Scenarios & Design Considerations

RF Manual 16th edition

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