BLF7G27LS-90P

Partnumber	Manufacturer	Quantity	Availability
BLF7G27LS-90P Manufacturer: NXP Power LDMOS transistor
BLF7G27LS-90P,BLF7G27LS90P	NXP	3	In Stock
Description and Introduction Power LDMOS transistor The BLF7G27LS-90P is a high-power LDMOS transistor manufactured by NXP Semiconductors. Here are its key specifications: - Frequency Range: 2.6 GHz to 2.7 GHz - Output Power: 90 W (P3dB) - Gain: 16 dB (typical) - Efficiency: 45% (typical) - Voltage Supply (VDD): 32 V - Package: Air-cavity ceramic - Application: Designed for use in RF power amplifiers, particularly in wireless infrastructure applications such as LTE and 4G base stations. This information is based on NXP's official datasheet for the BLF7G27LS-90P.
Application Scenarios & Design Considerations Power LDMOS transistor
Alternative Part Number MRFE6VP61K25H --: LDMOS RF power transistor in the same 2.7 GHz class with higher output power, suitable as an upgrade or drop-in-class replacement for base station amplifier designs. PTFA271501E --: Wideband LDMOS RF power MOSFET covering the 2.7 GHz band with comparable gain and power, usable as a cross-manufacturer alternative. MRF6S27090H --: LDMOS RF power transistor rated near 90 W at 2.7 GHz, closely matching the original power class for cellular infrastructure amplifiers.

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BLF7G27LS-90P from NXP,NXP Semiconductors