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BLF7G27LS-140 from NXP,NXP Semiconductors

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BLF7G27LS-140

Manufacturer: NXP

Power LDMOS transistor
Partnumber Manufacturer Quantity Availability
BLF7G27LS-140,BLF7G27LS140 NXP 100 In Stock

Description and Introduction

Power LDMOS transistor The part **BLF7G27LS-140** is manufactured by **NXP Semiconductors**. Below are the key specifications:

- **Type**: LDMOS RF Power Transistor  
- **Frequency Range**: 2.6 GHz to 2.7 GHz  
- **Output Power**: 140 W  
- **Gain**: 16 dB (typical)  
- **Efficiency**: 45% (typical)  
- **Voltage Supply (VDD)**: 32 V  
- **Package**: Air-cavity ceramic  
- **Application**: Designed for use in RF power amplifiers, particularly in **4G/LTE base stations**.  
- **Technology**: Advanced LDMOS (Laterally Diffused Metal Oxide Semiconductor)  

This transistor is optimized for high efficiency and linearity in wireless infrastructure applications.  

(Note: Always verify with the latest datasheet from NXP for precise details.)

Application Scenarios & Design Considerations

Power LDMOS transistor

Alternative Part Number

  • MRFE6VP5600H --: LDMOS RF power transistor in the same 27-28V class with comparable output power and gain, suitable for similar base-station amplifier designs.
  • PTFA271401E --: 27V LDMOS RF power FET with similar power level and frequency range, a common cross-vendor alternative for 2.7 GHz amplifier stages.
  • MRF8P270140H --: Dual-path LDMOS device covering the same 2.7 GHz band with comparable output power, usable as a functional substitute with layout adjustments.

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