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BLF7G20LS-250P from FREESCALE

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BLF7G20LS-250P

Manufacturer: FREESCALE, NXP

Power LDMOS transistor
Partnumber Manufacturer Quantity Availability
BLF7G20LS-250P,BLF7G20LS250P FREESCALE, NXP 29 In Stock

Description and Introduction

Power LDMOS transistor The BLF7G20LS-250P is a power LDMOS transistor manufactured by NXP. Below are its key specifications:

- **Frequency Range**: 1800 MHz to 2200 MHz  
- **Output Power**: 250 W  
- **Drain Efficiency**: Typically 65%  
- **Gain**: Typically 16 dB  
- **Supply Voltage (VDD)**: 32 V  
- **Package**: Air-cavity ceramic  
- **Operating Mode**: Class AB  
- **Matching**: Input and output pre-matched for 50 Ω  
- **Application**: Designed for use in RF power amplifiers, particularly in industrial, scientific, and medical (ISM) applications, as well as broadcast and cellular infrastructure.  

This information is based solely on NXP's datasheet for the BLF7G20LS-250P.

Application Scenarios & Design Considerations

Power LDMOS transistor

Alternative Part Number

  • MRF6VP2600H --: LDMOS RF power transistor in the same 2 GHz / 250 W class with similar gain and supply voltage, commonly used as a drop-in replacement for Freescale BLF-series parts.
  • PTFA212501E --: Wideband LDMOS power transistor rated around 250 W at 2.1 GHz, matching the BLF7G20LS-250P output power and frequency range for base station amplifier designs.
  • MRF7S21170HS --: LDMOS RF power device in the 2.1 GHz band with comparable gain and ruggedness, suitable as an alternative when slightly lower output power can be tolerated.
  • MRFE6VP6300H --: LDMOS RF power transistor in the same 2 GHz class with comparable output power, suitable as a functional substitute in amplifier designs.
  • PTFA211001E --: LDMOS RF power transistor covering the 2 GHz band with similar gain and power capability, usable as a cross-manufacturer alternative.

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