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BLF7G10L-250 from NXP,NXP Semiconductors

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BLF7G10L-250

Manufacturer: NXP

Power LDMOS transistor

Partnumber Manufacturer Quantity Availability
BLF7G10L-250,BLF7G10L250 NXP 3 In Stock

Description and Introduction

Power LDMOS transistor The BLF7G10L-250 is a power LDMOS transistor manufactured by NXP Semiconductors.  

**Key Specifications:**  
- **Frequency Range:** 2.3 GHz to 2.7 GHz  
- **Output Power:** 250 W (PEP)  
- **Gain:** 16 dB (typical)  
- **Efficiency:** 40% (typical)  
- **Voltage Supply (VDD):** 32 V  
- **Package:** Flange  
- **Application:** Designed for RF power amplifiers in industrial, scientific, and medical (ISM) applications, as well as broadcast and aerospace/defense systems.  

For detailed electrical characteristics and performance curves, refer to the official NXP datasheet.

Application Scenarios & Design Considerations

Power LDMOS transistor

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