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BLF6G38LS-50 from NXP,NXP Semiconductors

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BLF6G38LS-50

Manufacturer: NXP

WiMAX power LDMOS transistor
Partnumber Manufacturer Quantity Availability
BLF6G38LS-50,BLF6G38LS50 NXP 60 In Stock

Description and Introduction

WiMAX power LDMOS transistor The BLF6G38LS-50 is a high-power LDMOS transistor manufactured by NXP. Here are its key specifications:

- **Frequency Range**: 1805–1880 MHz  
- **Output Power**: 50 W (typical)  
- **Gain**: 17 dB (typical)  
- **Efficiency**: 45% (typical)  
- **Drain Voltage (VDD)**: 28 V  
- **Package**: SOT502A (Flange)  
- **Application**: Designed for use in RF power amplifiers, particularly in base station applications.  

Additional features include:
- **Input/Output Impedance**: 50 Ω  
- **Thermal Resistance**: 0.5 °C/W (junction to flange)  
- **Operating Temperature Range**: -40 °C to +150 °C  

This transistor is optimized for high linearity and efficiency in the 1.8 GHz frequency band.

Application Scenarios & Design Considerations

WiMAX power LDMOS transistor

Alternative Part Number

  • MRFE6S9045N --: LDMOS RF power transistor in the same 3.4-3.8 GHz class with comparable output power, suitable as a functional substitute in similar amplifier designs.
  • PTFA091201E --: Wideband LDMOS RF power transistor covering the 3.5 GHz band with similar gain and power capability, usable as an alternative with minor matching adjustments.
  • CGH40045F --: GaN HEMT RF power transistor offering comparable output power and higher efficiency in the 3.5 GHz range, a viable alternative when re-tuning the matching network.

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