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BLF6G27-10G from NXP,NXP Semiconductors

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BLF6G27-10G

Manufacturer: NXP

WiMAX power LDMOS transistor
Partnumber Manufacturer Quantity Availability
BLF6G27-10G,BLF6G2710G NXP 17478 In Stock

Description and Introduction

WiMAX power LDMOS transistor The BLF6G27-10G is a high-power LDMOS transistor manufactured by NXP Semiconductors. Below are its key specifications:

- **Frequency Range**: 2.6 GHz  
- **Output Power**: 10 W (40 dBm)  
- **Gain**: 17 dB (typical)  
- **Efficiency**: 40% (typical)  
- **Voltage Supply (VDD)**: 28 V  
- **Package**: SOT-502A (flange-mounted)  
- **Technology**: LDMOS  
- **Application**: Designed for RF power amplifiers in applications such as base stations and other wireless infrastructure.  

For detailed electrical characteristics and performance curves, refer to the official NXP datasheet.

Application Scenarios & Design Considerations

WiMAX power LDMOS transistor

Alternative Part Number

  • MRF6VP2600H --: LDMOS RF power transistor in the same 2.7 GHz class with comparable output power, suitable as a drop-in replacement in RF amplifier designs.
  • PTFA271501E --: Wideband LDMOS RF power transistor covering the 2.7 GHz band with similar gain and power ratings, usable as an alternative source.
  • MRFE6VP61K25H --: High-power LDMOS RF transistor with higher output capability that can replace the BLF6G27-10G where extra power margin is acceptable.

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