BLF6G27-10

Partnumber	Manufacturer	Quantity	Availability
BLF6G27-10 Manufacturer: NXP WiMAX power LDMOS transistor
BLF6G27-10,BLF6G2710	NXP	4	In Stock
Description and Introduction WiMAX power LDMOS transistor The BLF6G27-10 is a high-power LDMOS transistor manufactured by NXP Semiconductors. Here are its key specifications: - Frequency Range: 2.6 GHz to 2.7 GHz - Output Power (Pout): 10 W (40 dBm) - Gain: 16 dB (typical) - Efficiency: 40% (typical) - Voltage (Vds): 28 V - Package: SOT-502A (Flange) - Application: Designed for use in RF power amplifiers, particularly in base station applications. These are the factual specifications provided by NXP for the BLF6G27-10 transistor.
Application Scenarios & Design Considerations WiMAX power LDMOS transistor
Alternative Part Number MRF6VP2600H --: LDMOS RF power transistor in the same 2.6-2.7 GHz class with comparable output power, suitable as a drop-in functional substitute. PTFA261001E --: Wideband LDMOS RF power FET covering the 2.6 GHz band with similar gain and power ratings, usable as a cross-vendor alternative. MRFE6VP5150N --: High-power LDMOS RF transistor with overlapping frequency range and higher power headroom, usable where derating is acceptable.

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BLF6G27-10 from NXP,NXP Semiconductors