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BLF6G22L-40BN from NXP,NXP Semiconductors

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BLF6G22L-40BN

Manufacturer: NXP

Power LDMOS transistor

Partnumber Manufacturer Quantity Availability
BLF6G22L-40BN,BLF6G22L40BN NXP 60 In Stock

Description and Introduction

Power LDMOS transistor The BLF6G22L-40BN is a high-power LDMOS transistor manufactured by NXP. Here are its key specifications:  

- **Frequency Range:** 2110–2170 MHz  
- **Output Power:** 40 W (typical)  
- **Gain:** 17 dB (typical)  
- **Efficiency:** 40% (typical)  
- **Voltage Supply (VDD):** 28 V  
- **Package:** SOT1229 (flange package)  
- **Application:** Designed for use in RF power amplifiers, particularly in cellular infrastructure applications such as 3G and 4G base stations.  

The transistor is optimized for high linearity and efficiency in the 2.1 GHz frequency band.

Application Scenarios & Design Considerations

Power LDMOS transistor

Alternative Part Number

  • MRF6VP2600H --: LDMOS RF power transistor in the same 2.2 GHz class with comparable output power, suitable as a drop-in alternative for base station amplifier designs.
  • PTFA220401E --: LDMOS RF power transistor rated around 40 W at 2.2 GHz, offering similar gain and efficiency for cellular infrastructure applications.
  • AFT27S006N --: Later-generation LDMOS device covering the 2.2 GHz band with comparable power capability and improved ruggedness, usable as a design upgrade.

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