BLF6G20-45

Partnumber	Manufacturer	Quantity	Availability
BLF6G20-45 Manufacturer: NXP Power LDMOS transistor
BLF6G20-45,BLF6G2045	NXP	600	In Stock
Description and Introduction Power LDMOS transistor The BLF6G20-45 is a high-power LDMOS transistor manufactured by NXP Semiconductors. Here are its key specifications: - Frequency Range: 2000–2200 MHz - Output Power: 45 W - Gain: 16 dB (typical) - Efficiency: 40% (typical) - Voltage Supply (VDS): 28 V - Package: SOT502A (flanged) - Application: Designed for RF power amplifiers in industrial, scientific, and medical (ISM) applications, as well as broadband and cellular infrastructure. For detailed electrical and thermal characteristics, refer to the official NXP datasheet.
Application Scenarios & Design Considerations Power LDMOS transistor
Alternative Part Number MRFE6VP5150N --: LDMOS RF power transistor in the same 2 GHz class with comparable output power and gain, suitable as a higher-power drop-in for similar amplifier designs. PTFA211001E --: LDMOS RF power MOSFET covering the 2 GHz band with similar gain and efficiency, usable as a cross-vendor alternative with matching network retuning. MRF6S21140H --: RF LDMOS transistor for 2 GHz applications with comparable power capability and similar bias requirements, a practical alternate source option.

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BLF6G20-45 from NXP,NXP Semiconductors