BLC8G27LS-160AV

Partnumber	Manufacturer	Quantity	Availability
BLC8G27LS-160AV Manufacturer: NXP Power LDMOS transistor
BLC8G27LS-160AV,BLC8G27LS160AV	NXP	326	In Stock
Description and Introduction Power LDMOS transistor The BLC8G27LS-160AV is a power LDMOS transistor manufactured by NXP. Here are its key specifications: 1. Frequency Range: 2.3–2.7 GHz 2. Output Power: 160 W (typical) 3. Gain: 16 dB (typical) 4. Efficiency: 40% (typical) 5. Drain-Source Voltage (VDS): 32 V 6. Package: Air-cavity ceramic 7. Applications: Designed for use in RF power amplifiers, particularly in industrial, scientific, and medical (ISM) applications. For detailed electrical and thermal characteristics, refer to NXP's official datasheet.
Application Scenarios & Design Considerations Power LDMOS transistor
Alternative Part Number AFT27S006N --: NXP LDMOS RF power transistor in the same 2.7 GHz class with comparable output power and gain, suitable as a functional substitute in RF amplifier designs. MRF8P2700HR3 --: LDMOS RF power device covering the 2.7 GHz band with similar power capability, commonly used as a cross-reference for NXP 2.7 GHz LDMOS parts. PTFA270451E --: Wideband LDMOS RF power transistor from a different vendor covering the 2.7 GHz range, offering comparable gain and output power for drop-in evaluation.

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Specializes in hard-to-find components chips

BLC8G27LS-160AV from NXP,NXP Semiconductors