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BF2030R from INFINEON

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16.113ms

BF2030R

Manufacturer: INFINEON

RF-MOSFET

Partnumber Manufacturer Quantity Availability
BF2030R INFINEON 12000 In Stock

Description and Introduction

RF-MOSFET The BF2030R is a power MOSFET manufactured by Infineon Technologies. Here are its key specifications:

- **Type**: N-channel MOSFET
- **Package**: TO-252 (DPAK)
- **Drain-Source Voltage (VDS)**: 30V
- **Continuous Drain Current (ID)**: 44A
- **Pulsed Drain Current (IDM)**: 176A
- **Power Dissipation (PD)**: 57W
- **Gate-Source Voltage (VGS)**: ±20V
- **On-Resistance (RDS(on))**: 4.5mΩ (max at VGS = 10V)
- **Threshold Voltage (VGS(th))**: 1.5V (min) to 2.5V (max)
- **Total Gate Charge (Qg)**: 45nC (typ)
- **Operating Temperature Range**: -55°C to +175°C

These specifications are based on Infineon's datasheet for the BF2030R.

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