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BF1211R from PHILIPS

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14.893ms

BF1211R

Manufacturer: PHILIPS

N-channel dual-gate MOS-FETs

Partnumber Manufacturer Quantity Availability
BF1211R PHILIPS 3000 In Stock

Description and Introduction

N-channel dual-gate MOS-FETs The part BF1211R is a transistor manufactured by PHILIPS. Here are its specifications:

- **Type**: NPN RF Transistor  
- **Application**: Designed for RF amplification in VHF/UHF applications  
- **Collector-Base Voltage (VCBO)**: 30V  
- **Collector-Emitter Voltage (VCEO)**: 12V  
- **Emitter-Base Voltage (VEBO)**: 3V  
- **Collector Current (IC)**: 30mA  
- **Power Dissipation (Ptot)**: 300mW  
- **Transition Frequency (fT)**: 5GHz  
- **Noise Figure (NF)**: 1.5dB (typical at 1GHz)  
- **Package**: SOT-143  

These are the factual specifications for the BF1211R transistor from PHILIPS.

Partnumber Manufacturer Quantity Availability
BF1211R NXP 21000 In Stock

Description and Introduction

N-channel dual-gate MOS-FETs The part BF1211R is a RF transistor manufactured by NXP. Below are its key specifications:  

- **Type**: RF Transistor  
- **Package**: SOT-143R  
- **Frequency Range**: 5.9 GHz  
- **Application**: Low-noise amplifier (LNA) for automotive radar systems  
- **Gain (Typical)**: 14 dB at 5.9 GHz  
- **Noise Figure (Typical)**: 1.2 dB at 5.9 GHz  
- **Supply Voltage (VCC)**: 3.3 V  
- **Current Consumption (ICC)**: 20 mA  
- **Operating Temperature Range**: -40°C to +125°C  

These specifications are based on NXP's official datasheet for the BF1211R.

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