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BF1100 R from PHILIPS

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BF1100 R

Manufacturer: PHILIPS

Dual-gate MOS-FETs

Partnumber Manufacturer Quantity Availability
BF1100 R,BF1100R PHILIPS 330 In Stock

Description and Introduction

Dual-gate MOS-FETs The part **BF1100 R** is manufactured by **PHILIPS**. Below are its specifications:  

- **Type**: RF transistor  
- **Material**: Silicon  
- **Maximum Collector-Emitter Voltage (VCE)**: 12V  
- **Maximum Collector Current (IC)**: 100mA  
- **Power Dissipation (Ptot)**: 300mW  
- **Transition Frequency (fT)**: 600MHz  
- **Gain Bandwidth Product**: High-frequency performance  
- **Package**: TO-92  

This transistor is commonly used in RF amplification and switching applications.  

(Note: Specifications are based on available data; always verify with the latest datasheet.)

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