Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network The part BF1009 is manufactured by SIEMENS. Specific technical specifications for BF1009 are not provided in Ic-phoenix technical data files. For detailed specifications, refer to the official SIEMENS documentation or datasheets.

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network The part BF1009 is manufactured by **Infineon**. Below are the factual specifications from Ic-phoenix technical data files:  

- **Manufacturer:** Infineon  
- **Part Number:** BF1009  
- **Type:** RF Transistor  
- **Application:** Designed for RF amplification in the VHF/UHF range  
- **Package:** SOT-143  
- **Material:** Silicon  
- **Frequency Range:** Typically used in applications up to several hundred MHz  
- **Polarity:** NPN  

For detailed electrical characteristics, refer to the official Infineon datasheet.