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BD242B from ON,ON Semiconductor

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8.057ms

BD242B

Manufacturer: ON

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS

Partnumber Manufacturer Quantity Availability
BD242B ON 50 In Stock

Description and Introduction

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS The BD242B is a power transistor manufactured by ON Semiconductor (formerly Motorola Semiconductor). Here are its key specifications:

- **Type**: PNP Silicon Power Transistor
- **Collector-Emitter Voltage (VCEO)**: -45V
- **Collector-Base Voltage (VCBO)**: -60V
- **Emitter-Base Voltage (VEBO)**: -5V
- **Collector Current (IC)**: -6A
- **Power Dissipation (PD)**: 65W (with heat sink)
- **DC Current Gain (hFE)**: 15 to 75 (at IC = -4A, VCE = -4V)
- **Transition Frequency (fT)**: 3MHz (typical)
- **Package**: TO-220 (isolated and non-isolated versions available)
- **Operating Temperature Range**: -65°C to +150°C

These specifications are based on ON Semiconductor's datasheet for the BD242B.

Partnumber Manufacturer Quantity Availability
BD242B STM 50000 In Stock

Description and Introduction

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS The BD242B is a power transistor manufactured by STMicroelectronics (STM). Here are its key specifications:

- **Type**: PNP Bipolar Junction Transistor (BJT)  
- **Collector-Emitter Voltage (VCEO)**: -45V  
- **Collector-Base Voltage (VCBO)**: -60V  
- **Emitter-Base Voltage (VEBO)**: -5V  
- **Collector Current (IC)**: -6A  
- **Power Dissipation (Ptot)**: 65W  
- **DC Current Gain (hFE)**: 15-75  
- **Operating Junction Temperature (Tj)**: -65°C to +150°C  
- **Package**: TO-220  

This transistor is designed for power amplification and switching applications.  

(Source: STMicroelectronics datasheet for BD242B.)

Partnumber Manufacturer Quantity Availability
BD242B ST 8476 In Stock

Description and Introduction

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS The BD242B is a PNP power transistor manufactured by STMicroelectronics. Here are its key specifications:

- **Collector-Emitter Voltage (VCEO):** -45V  
- **Collector-Base Voltage (VCBO):** -60V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -3A (continuous)  
- **Power Dissipation (Ptot):** 36W  
- **DC Current Gain (hFE):** 20 to 250 (at IC = -1.5A, VCE = -4V)  
- **Transition Frequency (fT):** 3MHz (typical)  
- **Operating Junction Temperature (Tj):** -65°C to +150°C  
- **Package:** TO-220  

It is designed for general-purpose amplification and switching applications.

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