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BD179 from ST,ST Microelectronics

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BD179

Manufacturer: ST

Leaded Power Transistor General Purpose

Partnumber Manufacturer Quantity Availability
BD179 ST 9000 In Stock

Description and Introduction

Leaded Power Transistor General Purpose The BD179 is a PNP silicon planar epitaxial transistor manufactured by STMicroelectronics.  

**Key Specifications:**  
- **Type:** PNP  
- **Material:** Silicon  
- **Structure:** Planar epitaxial  
- **Collector-Base Voltage (VCBO):** -45V  
- **Collector-Emitter Voltage (VCEO):** -45V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -1A  
- **Total Power Dissipation (Ptot):** 1W  
- **Junction Temperature (Tj):** 150°C  
- **DC Current Gain (hFE):** 40 to 250 (depending on conditions)  
- **Transition Frequency (fT):** 100MHz (typical)  

**Package:** TO-39 (hermetic metal can)  

This transistor is designed for general-purpose amplification and switching applications.  

(Source: STMicroelectronics datasheet for BD179.)

Partnumber Manufacturer Quantity Availability
BD179 MOT 985 In Stock

Description and Introduction

Leaded Power Transistor General Purpose The BD179 is a PNP silicon transistor manufactured by MOT (Mullard Ltd.). Here are its key specifications:

- **Type:** PNP silicon transistor  
- **Maximum Collector-Emitter Voltage (VCE):** -45V  
- **Maximum Collector-Base Voltage (VCB):** -45V  
- **Maximum Emitter-Base Voltage (VEB):** -5V  
- **Maximum Collector Current (IC):** -1A  
- **Power Dissipation (Ptot):** 8W  
- **DC Current Gain (hFE):** 40 to 250 (depending on operating conditions)  
- **Transition Frequency (fT):** 50MHz  
- **Package:** TO-39 metal can  

These are the standard specifications provided by MOT for the BD179 transistor.

Partnumber Manufacturer Quantity Availability
BD179 ON 7500 In Stock

Description and Introduction

Leaded Power Transistor General Purpose The BD179 is a PNP silicon transistor manufactured by ON Semiconductor.  

**Key Specifications:**  
- **Type:** PNP Silicon Transistor  
- **Collector-Base Voltage (VCBO):** -60V  
- **Collector-Emitter Voltage (VCEO):** -60V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -1A  
- **Power Dissipation (PD):** 0.8W  
- **DC Current Gain (hFE):** 40 to 250 (at IC = 150mA, VCE = -1V)  
- **Transition Frequency (fT):** 50MHz (typical)  
- **Operating Temperature Range:** -65°C to +150°C  

**Package:** TO-39 (Metal Can)  

The BD179 is designed for general-purpose amplification and switching applications.

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