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BCX79-9 from NS,National Semiconductor

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BCX79-9

Manufacturer: NS

AMPLIFIER TRANSISTORS PNP SILICON

Partnumber Manufacturer Quantity Availability
BCX79-9,BCX799 NS 2100 In Stock

Description and Introduction

AMPLIFIER TRANSISTORS PNP SILICON The BCX79-9 is a PNP bipolar junction transistor (BJT) manufactured by NXP Semiconductors (formerly Philips). Below are its key specifications:

1. **Type**: PNP transistor  
2. **Package**: SOT89 (SC-62)  
3. **Collector-Base Voltage (VCBO)**: -30V  
4. **Collector-Emitter Voltage (VCEO)**: -20V  
5. **Emitter-Base Voltage (VEBO)**: -5V  
6. **Collector Current (IC)**: -1A  
7. **Power Dissipation (Ptot)**: 1W  
8. **DC Current Gain (hFE)**: 40-250 (at IC = -150mA, VCE = -1V)  
9. **Transition Frequency (fT)**: 100MHz  
10. **Operating Temperature Range**: -55°C to +150°C  

These specifications are based on NXP's datasheet for the BCX79-9 transistor.

Partnumber Manufacturer Quantity Availability
BCX79-9,BCX799 FSC 20000 In Stock

Description and Introduction

AMPLIFIER TRANSISTORS PNP SILICON The part **BCX79-9** is manufactured by **FSC (Fairchild Semiconductor Corporation)**.  

### **FSC Specifications for BCX79-9:**  
- **Type:** PNP Bipolar Junction Transistor (BJT)  
- **Package:** SOT-89  
- **Collector-Emitter Voltage (VCEO):** -45V  
- **Collector-Base Voltage (VCBO):** -50V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -1A  
- **Power Dissipation (Ptot):** 1W  
- **DC Current Gain (hFE):** 100–630  
- **Transition Frequency (fT):** 100MHz  
- **Operating Temperature Range:** -55°C to +150°C  

This information is based on Fairchild Semiconductor's datasheet for the **BCX79-9** transistor.

Partnumber Manufacturer Quantity Availability
BCX79-9,BCX799 FAIRCHILD 20000 In Stock

Description and Introduction

AMPLIFIER TRANSISTORS PNP SILICON The BCX79-9 is a PNP transistor manufactured by Fairchild Semiconductor. Here are its key specifications:

- **Type**: PNP Bipolar Junction Transistor (BJT)  
- **Package**: SOT-89  
- **Collector-Base Voltage (VCBO)**: -30V  
- **Collector-Emitter Voltage (VCEO)**: -25V  
- **Emitter-Base Voltage (VEBO)**: -5V  
- **Collector Current (IC)**: -1A  
- **Power Dissipation (PD)**: 1W  
- **DC Current Gain (hFE)**: 100 to 250 (at IC = -150mA, VCE = -5V)  
- **Transition Frequency (fT)**: 100MHz (min)  
- **Operating Temperature Range**: -55°C to +150°C  

These specifications are based on Fairchild Semiconductor's datasheet for the BCX79-9 transistor.

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