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AT27C1024 from AT,Atmel

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15.625ms

AT27C1024

Manufacturer: AT

1M bit, x16 EPROM

Partnumber Manufacturer Quantity Availability
AT27C1024 AT 36 In Stock

Description and Introduction

1M bit, x16 EPROM The AT27C1024 is a 1-megabit (128K x 8) OTP (One-Time Programmable) EPROM manufactured by Atmel (now part of Microchip Technology).  

### Key Specifications:  
- **Memory Size**: 1 Megabit (128K x 8)  
- **Technology**: CMOS OTP EPROM  
- **Supply Voltage**: 5V ± 10%  
- **Access Time**: 45 ns, 55 ns, 70 ns, 90 ns, 120 ns (depending on variant)  
- **Operating Current**: 30 mA (typical)  
- **Standby Current**: 100 µA (typical)  
- **Package Options**:  
  - 40-lead PDIP (Plastic Dual In-line Package)  
  - 44-lead PLCC (Plastic Leaded Chip Carrier)  
  - 44-lead TSOP (Thin Small Outline Package)  
- **Programming Voltage (VPP)**: 12.5V  
- **Data Retention**: 10 years minimum  
- **Operating Temperature Range**:  
  - Commercial (0°C to +70°C)  
  - Industrial (-40°C to +85°C)  

The AT27C1024 is designed for applications requiring high-density, non-volatile memory with fast read access times. It is programmed once and retains data without power.

Partnumber Manufacturer Quantity Availability
AT27C1024 295 In Stock

Description and Introduction

1M bit, x16 EPROM The AT27C1024 is a 1-megabit (128K x 8) OTP (One-Time Programmable) EPROM manufactured by Atmel (now Microchip Technology).  

### Key Specifications:  
- **Memory Size:** 1 Megabit (128K x 8)  
- **Technology:** CMOS  
- **Supply Voltage:** 5V ±10%  
- **Access Time:** 70 ns, 90 ns, 120 ns (depending on variant)  
- **Operating Current:** 30 mA (typical)  
- **Standby Current:** 100 µA (typical)  
- **Package Options:** 40-pin PDIP, 44-pin PLCC, 40-pin CERDIP  
- **OTP (One-Time Programmable):** Requires UV erasure for reprogramming (though this model is OTP, meaning no window for UV erasure)  
- **Programming Voltage (VPP):** 12.5V (for programming)  
- **Temperature Range:** Commercial (0°C to 70°C), Industrial (-40°C to 85°C), and Military (-55°C to 125°C)  

This device is designed for applications requiring non-volatile memory storage with high reliability.

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