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5-410 from SILICONIX

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15.137ms

5-410

Manufacturer: SILICONIX

Triple 3-Input NAND Gate

Partnumber Manufacturer Quantity Availability
5-410,5410 SILICONIX 120 In Stock

Description and Introduction

Triple 3-Input NAND Gate Part 5-410 from SILICONIX is a P-channel enhancement mode vertical DMOS FET. Key specifications include:

- **Drain-Source Voltage (VDSS)**: -20V
- **Gate-Source Voltage (VGS)**: ±10V
- **Drain Current (ID)**: -4.3A
- **Power Dissipation (PD)**: 1W
- **On-Resistance (RDS(on))**: 0.1Ω (max) at VGS = -10V, ID = -4.3A
- **Gate Threshold Voltage (VGS(th))**: -1V to -3V
- **Input Capacitance (Ciss)**: 300pF (typ)
- **Output Capacitance (Coss)**: 100pF (typ)
- **Reverse Transfer Capacitance (Crss)**: 50pF (typ)

These specifications are based on the typical operating conditions provided by SILICONIX.

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For immediate assistance, call us at +86 533 2716050 or email [email protected]

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