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3DD200

Silicon NPN Power Transistors

Partnumber Manufacturer Quantity Availability
3DD200 129 In Stock

Description and Introduction

Silicon NPN Power Transistors The 3DD200 is a silicon NPN power transistor. Here are the key specifications:

- **Collector-Emitter Voltage (Vceo):** 200V
- **Collector-Base Voltage (Vcbo):** 250V
- **Emitter-Base Voltage (Vebo):** 6V
- **Collector Current (Ic):** 15A
- **Power Dissipation (Pc):** 150W
- **DC Current Gain (hFE):** 15-60
- **Operating Junction Temperature (Tj):** -55°C to +150°C
- **Package Type:** TO-3

These specifications are typical for the 3DD200 transistor, commonly used in power amplification and switching applications.

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