2N6075Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. | |||
| Partnumber | Manufacturer | Quantity | Availability |
|---|---|---|---|
| 2N6075 | 25 | In Stock | |
Description and Introduction
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. The 2N6075 is a silicon-controlled rectifier (SCR) manufactured by various companies, including ON Semiconductor. Key specifications for the 2N6075 include:
- **Voltage - Off State (Vdrm):** 400V These specifications are typical for the 2N6075 SCR, but always refer to the specific datasheet from the manufacturer for precise details. |
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Application Scenarios & Design Considerations
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.# 2N6075 TRIAC Technical Documentation
## 1. Application Scenarios ### Typical Use Cases  AC Load Switching   Phase Control Applications  ### Industry Applications  Industrial Automation   HVAC Systems  ### Practical Advantages and Limitations  Advantages:   Limitations:  ## 2. Design Considerations ### Common Design Pitfalls and Solutions  False Triggering Issues   Thermal Runaway   Commutation Failure  ### Compatibility Issues with Other Components  Gate Drive Circuits   Load Compatibility  ### PCB Layout Recommendations  Power Routing   Thermal Management   Noise Reduction  |
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| Partnumber | Manufacturer | Quantity | Availability |
| 2N6075 | MOTO | 3 | In Stock |
Description and Introduction
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. The 2N6075 is a silicon-controlled rectifier (SCR) manufactured by Motorola (MOTO). Here are the key specifications:
- **Type**: SCR (Silicon-Controlled Rectifier) These specifications are based on the manufacturer's datasheet for the 2N6075 SCR. |
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Application Scenarios & Design Considerations
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.# 2N6075 TRIAC Technical Documentation
## 1. Application Scenarios ### Typical Use Cases  AC Load Switching   Phase Control Applications  ### Industry Applications  Consumer Appliances   Industrial Automation   Building Automation  ### Practical Advantages and Limitations  Advantages:   Limitations:  ## 2. Design Considerations ### Common Design Pitfalls and Solutions  False Triggering Issues   Gate Drive Insufficiency   Thermal Runaway  ### Compatibility Issues  Gate Drive Circuits   Load Compatibility   Protection Components  ### PCB Layout Recommendations  Power Routing   Thermal Management   Gate Circuit Isolation  |
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| Partnumber | Manufacturer | Quantity | Availability |
| 2N6075 | ON | 1000 | In Stock |
Description and Introduction
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. The 2N6075 is a silicon-controlled rectifier (SCR) manufactured by ON Semiconductor. Key specifications include:
- **Voltage - Off State (Vdrm):** 400V These specifications are typical for the 2N6075 SCR as provided by ON Semiconductor. |
|||
Application Scenarios & Design Considerations
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.# 2N6075 TRIAC Technical Documentation
## 1. Application Scenarios ### Typical Use Cases  AC Load Switching   Phase Control Applications  ### Industry Applications  Consumer Electronics   Industrial Control   Automotive Systems  ### Practical Advantages and Limitations  Advantages:   Limitations:  ## 2. Design Considerations ### Common Design Pitfalls and Solutions  False Triggering Issues   Thermal Runaway   Commutation Failures  ### Compatibility Issues with Other Components  Gate Drive Circuits   Load Compatibility   Protection Components  ### PCB Layout Recommendations  Power Routing  |
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