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2N5086 from FSC,Fairchild Semiconductor

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23.438ms

2N5086

Manufacturer: FSC

Leaded Small Signal Transistor General Purpose

Partnumber Manufacturer Quantity Availability
2N5086 FSC 6080 In Stock

Description and Introduction

Leaded Small Signal Transistor General Purpose The 2N5086 is a high-gain, low-noise NPN bipolar junction transistor (BJT). According to the FSC (Fairchild Semiconductor Corporation) specifications:

- **Type**: NPN
- **Material**: Silicon
- **Package**: TO-92
- **Collector-Emitter Voltage (Vceo)**: 30V
- **Collector-Base Voltage (Vcbo)**: 45V
- **Emitter-Base Voltage (Vebo)**: 5V
- **Collector Current (Ic)**: 50mA
- **Power Dissipation (Pd)**: 625mW
- **DC Current Gain (hFE)**: 400 to 1200
- **Transition Frequency (ft)**: 50MHz
- **Noise Figure (NF)**: 1dB (typical at 1kHz, 100µA, 1V)

These specifications are based on Fairchild Semiconductor's datasheet for the 2N5086 transistor.

Partnumber Manufacturer Quantity Availability
2N5086 Fairchild 5000 In Stock

Description and Introduction

Leaded Small Signal Transistor General Purpose The 2N5086 is a high-gain, low-noise NPN bipolar junction transistor (BJT) manufactured by Fairchild Semiconductor. Below are the key specifications for the 2N5086 transistor:

- **Type**: NPN
- **Package**: TO-92
- **Collector-Emitter Voltage (VCE)**: 30 V
- **Collector-Base Voltage (VCB)**: 30 V
- **Emitter-Base Voltage (VEB)**: 5 V
- **Collector Current (IC)**: 50 mA
- **Power Dissipation (PD)**: 625 mW
- **DC Current Gain (hFE)**: 400 to 1200 (typical)
- **Transition Frequency (fT)**: 50 MHz (typical)
- **Noise Figure (NF)**: 1 dB (typical at 1 kHz)
- **Operating Temperature Range**: -55°C to +150°C

These specifications are based on Fairchild Semiconductor's datasheet for the 2N5086 transistor.

Partnumber Manufacturer Quantity Availability
2N5086 NS 1350 In Stock

Description and Introduction

Leaded Small Signal Transistor General Purpose The 2N5086 is a high-gain NPN bipolar junction transistor (BJT) manufactured by National Semiconductor (NS). Below are the key specifications for the 2N5086:

- **Type**: NPN transistor
- **Package**: TO-92
- **Collector-Emitter Voltage (VCEO)**: 30V
- **Collector-Base Voltage (VCBO)**: 40V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 50mA
- **Power Dissipation (PD)**: 625mW
- **DC Current Gain (hFE)**: 400 to 1200 (typically high gain)
- **Transition Frequency (fT)**: 50MHz
- **Operating Temperature Range**: -65°C to +200°C

These specifications are based on the manufacturer's datasheet and are subject to standard operating conditions.

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