IC Phoenix logo

Home ›  2  › 24 > 2N4877

2N4877 from

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

0.000ms

2N4877

Bipolar NPN Device in a Hermetically sealed TO39

Partnumber Manufacturer Quantity Availability
2N4877 32 In Stock

Description and Introduction

Bipolar NPN Device in a Hermetically sealed TO39 The 2N4877 is a PNP silicon transistor. Here are the key specifications:

- **Type**: PNP
- **Material**: Silicon
- **Maximum Collector-Emitter Voltage (Vceo)**: 30V
- **Maximum Collector-Base Voltage (Vcbo)**: 30V
- **Maximum Emitter-Base Voltage (Vebo)**: 5V
- **Maximum Collector Current (Ic)**: 500mA
- **Maximum Power Dissipation (Pd)**: 625mW
- **DC Current Gain (hFE)**: 40 to 120
- **Transition Frequency (ft)**: 50MHz
- **Operating Temperature Range**: -65°C to +200°C

These specifications are typical for the 2N4877 transistor. Always refer to the manufacturer's datasheet for precise details and application guidelines.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips