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2N3903 from FAIRCHILD,Fairchild Semiconductor

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2N3903

Manufacturer: FAIRCHILD

Leaded Small Signal Transistor General Purpose

Partnumber Manufacturer Quantity Availability
2N3903 FAIRCHILD 6500 In Stock

Description and Introduction

Leaded Small Signal Transistor General Purpose The 2N3903 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Fairchild Semiconductor. Below are the key specifications:

- **Type**: NPN Transistor
- **Package**: TO-92
- **Collector-Emitter Voltage (Vceo)**: 40V
- **Collector-Base Voltage (Vcbo)**: 60V
- **Emitter-Base Voltage (Vebo)**: 6V
- **Collector Current (Ic)**: 200mA
- **Power Dissipation (Pd)**: 625mW
- **DC Current Gain (hFE)**: 30 to 300 (typically 100 at Ic = 10mA, Vce = 1V)
- **Transition Frequency (ft)**: 250MHz
- **Operating Temperature Range**: -55°C to +150°C

These specifications are typical for the 2N3903 transistor as provided by Fairchild Semiconductor.

Partnumber Manufacturer Quantity Availability
2N3903 FSC 150 In Stock

Description and Introduction

Leaded Small Signal Transistor General Purpose The 2N3903 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by FSC (Fairchild Semiconductor Corporation). Below are the factual specifications for the 2N3903 transistor:

- **Type**: NPN
- **Material**: Silicon
- **Maximum Collector-Emitter Voltage (V_CEO)**: 40V
- **Maximum Collector-Base Voltage (V_CBO)**: 60V
- **Maximum Emitter-Base Voltage (V_EBO)**: 6V
- **Maximum Collector Current (I_C)**: 200mA
- **Maximum Power Dissipation (P_D)**: 625mW
- **DC Current Gain (h_FE)**: Typically 100-300
- **Transition Frequency (f_T)**: 250MHz
- **Operating Temperature Range**: -55°C to +150°C
- **Package**: TO-92

These specifications are based on standard operating conditions and may vary slightly depending on the specific batch or manufacturer.

Partnumber Manufacturer Quantity Availability
2N3903 ON 20000 In Stock

Description and Introduction

Leaded Small Signal Transistor General Purpose The 2N3903 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. Below are the key specifications:

- **Type**: NPN Transistor
- **Package**: TO-92
- **Collector-Emitter Voltage (VCEO)**: 40 V
- **Collector-Base Voltage (VCBO)**: 60 V
- **Emitter-Base Voltage (VEBO)**: 6 V
- **Collector Current (IC)**: 200 mA
- **Power Dissipation (PD)**: 625 mW
- **DC Current Gain (hFE)**: 30 to 300 (typically 100 at IC = 10 mA, VCE = 1 V)
- **Transition Frequency (fT)**: 250 MHz
- **Operating Temperature Range**: -55°C to +150°C

These specifications are based on the datasheet provided by ON Semiconductor.

Partnumber Manufacturer Quantity Availability
2N3903 NS 25 In Stock

Description and Introduction

Leaded Small Signal Transistor General Purpose The 2N3903 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by NS (National Semiconductor). Below are the key specifications:

- **Type**: NPN Transistor
- **Collector-Emitter Voltage (V_CEO)**: 40V
- **Collector-Base Voltage (V_CBO)**: 60V
- **Emitter-Base Voltage (V_EBO)**: 6V
- **Collector Current (I_C)**: 200mA
- **Power Dissipation (P_D)**: 625mW
- **DC Current Gain (h_FE)**: 30 to 300 (typically 100 at 10mA)
- **Transition Frequency (f_T)**: 250MHz
- **Operating Temperature Range**: -55°C to +150°C
- **Package**: TO-92

These specifications are typical for the 2N3903 transistor and are subject to variations based on operating conditions.

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