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2N3859A from FSC,Fairchild Semiconductor

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2N3859A

Manufacturer: FSC

Leaded Small Signal Transistor General Purpose

Partnumber Manufacturer Quantity Availability
2N3859A FSC 10914 In Stock

Description and Introduction

Leaded Small Signal Transistor General Purpose The 2N3859A is a silicon NPN transistor manufactured by various companies, including Fairchild Semiconductor. It is designed for general-purpose amplifier and switching applications. The FSC (Federal Supply Code) specifications for the 2N3859A include:

- **Type**: NPN Silicon Transistor
- **Package**: TO-39 Metal Can
- **Collector-Emitter Voltage (Vceo)**: 40V
- **Collector-Base Voltage (Vcbo)**: 60V
- **Emitter-Base Voltage (Vebo)**: 5V
- **Collector Current (Ic)**: 600mA
- **Power Dissipation (Pd)**: 625mW
- **DC Current Gain (hFE)**: 40 to 120
- **Transition Frequency (ft)**: 100MHz
- **Operating Temperature Range**: -65°C to +200°C

These specifications are standard for the 2N3859A transistor and are consistent across manufacturers, including Fairchild Semiconductor.

Partnumber Manufacturer Quantity Availability
2N3859A FAIRCHILD 30000 In Stock

Description and Introduction

Leaded Small Signal Transistor General Purpose The 2N3859A is a silicon NPN transistor manufactured by Fairchild Semiconductor. Here are the key specifications:

- **Type**: NPN
- **Material**: Silicon
- **Package**: TO-39
- **Collector-Emitter Voltage (Vceo)**: 40V
- **Collector-Base Voltage (Vcbo)**: 60V
- **Emitter-Base Voltage (Vebo)**: 5V
- **Collector Current (Ic)**: 1A
- **Power Dissipation (Pd)**: 1W
- **DC Current Gain (hFE)**: 40-120
- **Transition Frequency (ft)**: 100MHz
- **Operating Temperature Range**: -65°C to +200°C

These specifications are typical for the 2N3859A transistor as provided by Fairchild Semiconductor.

Partnumber Manufacturer Quantity Availability
2N3859A NS 3620 In Stock

Description and Introduction

Leaded Small Signal Transistor General Purpose The 2N3859A is a silicon NPN transistor manufactured by National Semiconductor (NS). It is designed for general-purpose amplifier and switching applications. Key specifications include:

- **Collector-Emitter Voltage (V_CEO):** 40V
- **Collector-Base Voltage (V_CBO):** 60V
- **Emitter-Base Voltage (V_EBO):** 5V
- **Collector Current (I_C):** 800mA
- **Power Dissipation (P_D):** 625mW
- **DC Current Gain (h_FE):** 40 to 120
- **Transition Frequency (f_T):** 100MHz
- **Operating Temperature Range:** -65°C to +200°C

The transistor is available in a TO-39 metal can package.

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