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2SK2125 from 松下,Panasonic

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2SK2125

Manufacturer: 松下

Silicon N-Channel Power F-MOS FET

Partnumber Manufacturer Quantity Availability
2SK2125 松下 1100 In Stock

Description and Introduction

Silicon N-Channel Power F-MOS FET **Introduction to the Panasonic 2SK2125 MOSFET**  

The 2SK2125 from Panasonic is a high-performance N-channel power MOSFET designed for efficient switching and amplification applications. With a low on-resistance and high-speed switching capability, this component is well-suited for power management circuits, DC-DC converters, and motor control systems.  

Featuring a compact and robust package, the 2SK2125 ensures reliable operation under demanding conditions while minimizing power losses. Its optimized design enhances thermal performance, making it suitable for applications requiring sustained high-current handling.  

Key specifications of the 2SK2125 include a drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of 30A, providing a balance between power efficiency and durability. The MOSFET also offers a low gate charge, contributing to reduced switching losses in high-frequency circuits.  

Engineers and designers often select the 2SK2125 for its consistent performance, ease of integration, and compatibility with modern power electronics. Whether used in industrial equipment, automotive systems, or consumer electronics, this MOSFET delivers dependable power control with minimal energy dissipation.  

By combining advanced semiconductor technology with practical design, the 2SK2125 remains a reliable choice for applications demanding precision and efficiency in power switching.

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