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2SK2020-01MR from FUJI

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2SK2020-01MR

Manufacturer: FUJI

N-channel MOS-FET

Partnumber Manufacturer Quantity Availability
2SK2020-01MR,2SK202001MR FUJI 16 In Stock

Description and Introduction

N-channel MOS-FET # Introduction to the 2SK2020-01MR MOSFET  

The **2SK2020-01MR** is a high-performance N-channel power MOSFET designed for efficient switching and amplification applications. This component is widely used in power supply circuits, motor control systems, and other electronic devices requiring reliable power management.  

With a low on-resistance (RDS(on)) and high current-handling capability, the 2SK2020-01MR ensures minimal power loss and improved thermal performance. Its fast switching characteristics make it suitable for high-frequency applications, contributing to enhanced efficiency in modern electronics.  

The MOSFET features a compact surface-mount package, allowing for space-saving PCB designs while maintaining robust performance. It is engineered to withstand high voltage and current conditions, making it a dependable choice for industrial and consumer electronics.  

Key specifications include a high drain-source voltage rating, low gate charge, and strong avalanche energy tolerance, ensuring durability under demanding operational conditions. Engineers and designers favor the 2SK2020-01MR for its balance of performance, efficiency, and reliability in power electronics.  

Whether used in switching regulators, inverters, or load drivers, the 2SK2020-01MR offers a practical solution for high-power applications, delivering consistent performance in a compact form factor.

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