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2SK2009 from TOSHIBA

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15.625ms

2SK2009

Manufacturer: TOSHIBA

Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications

Partnumber Manufacturer Quantity Availability
2SK2009 TOSHIBA 30000 In Stock

Description and Introduction

Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications The part number 2SK2009 is a MOSFET transistor manufactured by TOSHIBA. Below are the factual specifications from Ic-phoenix technical data files:

- **Type**: N-Channel MOSFET
- **Drain-Source Voltage (Vds)**: 500V
- **Drain Current (Id)**: 10A
- **Power Dissipation (Pd)**: 50W
- **Gate-Source Voltage (Vgs)**: ±20V
- **On-Resistance (Rds(on))**: 0.5Ω (typical)
- **Package**: TO-220F

These specifications are based on standard operating conditions and may vary depending on the specific application or environment.

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