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2SK1984-01MR from FUJI

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15.625ms

2SK1984-01MR

Manufacturer: FUJI

N-channel MOS-FET

Partnumber Manufacturer Quantity Availability
2SK1984-01MR,2SK198401MR FUJI 30 In Stock

Description and Introduction

N-channel MOS-FET The part 2SK1984-01MR is a MOSFET transistor manufactured by FUJI. It is designed for high-speed switching applications and is commonly used in power supply circuits, inverters, and motor control systems. The key specifications of the 2SK1984-01MR include:

- **Drain-Source Voltage (Vds):** 500V
- **Drain Current (Id):** 10A
- **Power Dissipation (Pd):** 50W
- **Gate-Source Voltage (Vgs):** ±20V
- **On-Resistance (Rds(on)):** 0.45Ω (typical)
- **Input Capacitance (Ciss):** 1200pF (typical)
- **Output Capacitance (Coss):** 200pF (typical)
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)
- **Turn-On Delay Time (td(on)):** 15ns (typical)
- **Turn-Off Delay Time (td(off)):** 60ns (typical)
- **Operating Temperature Range:** -55°C to 150°C

The transistor is packaged in a TO-220F form factor, which is suitable for surface mounting. It is designed to provide high efficiency and reliability in various power electronics applications.

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