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2SK1917 from FUJI

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15.625ms

2SK1917

Manufacturer: FUJI

N-CHANNEL SILICON POWER MOSFET

Partnumber Manufacturer Quantity Availability
2SK1917 FUJI 20053 In Stock

Description and Introduction

N-CHANNEL SILICON POWER MOSFET The part 2SK1917 is a MOSFET transistor manufactured by FUJI. Here are the specifications:

- **Type**: N-channel MOSFET
- **Drain-Source Voltage (Vds)**: 60V
- **Gate-Source Voltage (Vgs)**: ±20V
- **Drain Current (Id)**: 30A
- **Power Dissipation (Pd)**: 100W
- **On-Resistance (Rds(on))**: 0.03Ω (typical)
- **Gate Threshold Voltage (Vth)**: 1.0V to 2.5V
- **Input Capacitance (Ciss)**: 2000pF (typical)
- **Output Capacitance (Coss)**: 500pF (typical)
- **Reverse Transfer Capacitance (Crss)**: 100pF (typical)
- **Operating Junction Temperature (Tj)**: -55°C to 150°C
- **Package**: TO-220

These specifications are based on typical operating conditions and may vary slightly depending on the specific application and environment.

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