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2SK1835 from HIT

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2SK1835

Manufacturer: HIT

Silicon N-Channel MOS FET

Partnumber Manufacturer Quantity Availability
2SK1835 HIT 20 In Stock

Description and Introduction

Silicon N-Channel MOS FET The **2SK1835** is a high-power N-channel MOSFET designed for applications requiring efficient switching and robust performance. Known for its low on-resistance and high current-handling capability, this component is widely used in power supply circuits, motor control systems, and audio amplifiers.  

With a drain-source voltage (VDSS) rating of **500V** and a continuous drain current (ID) of **12A**, the 2SK1835 is well-suited for high-voltage environments. Its low gate charge and fast switching characteristics help minimize power losses, making it an energy-efficient choice for modern electronic designs.  

The MOSFET features a **TO-3P** package, providing excellent thermal dissipation and mechanical durability. Engineers often select this component for its reliability in demanding conditions, including industrial and automotive applications.  

When integrating the 2SK1835 into a circuit, proper heat management and gate drive considerations are essential to maximize performance and longevity. Its specifications make it a versatile option for designers seeking a balance between power efficiency and cost-effectiveness.  

For detailed electrical characteristics and application guidelines, referring to the manufacturer’s datasheet is recommended to ensure optimal implementation.

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