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2SK1823-01R from FUJI

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2SK1823-01R

Manufacturer: FUJI

N-CHANNEL SILICON POWER MOSFET

Partnumber Manufacturer Quantity Availability
2SK1823-01R,2SK182301R FUJI 65 In Stock

Description and Introduction

N-CHANNEL SILICON POWER MOSFET The **2SK1823-01R** is a high-performance N-channel MOSFET designed for power management applications, offering efficient switching and low on-resistance. This electronic component is widely used in power supplies, motor control circuits, and DC-DC converters, where high efficiency and thermal stability are critical.  

With a low **RDS(on)** value, the 2SK1823-01R minimizes conduction losses, enhancing energy efficiency in high-current applications. Its robust design ensures reliable operation under demanding conditions, making it suitable for industrial and automotive electronics. The MOSFET also features a fast switching speed, reducing power dissipation and improving system performance.  

The device is housed in a compact, surface-mount package, facilitating easy integration into modern circuit designs while maintaining excellent thermal characteristics. Engineers often select the 2SK1823-01R for its balance of performance, durability, and cost-effectiveness in power conversion systems.  

When implementing this MOSFET, proper heat dissipation and gate drive considerations are essential to maximize its efficiency and lifespan. By adhering to recommended operating conditions, designers can leverage the 2SK1823-01R to achieve optimal power handling in their applications.  

Overall, the 2SK1823-01R stands as a reliable choice for power electronics, delivering high efficiency and robust performance in a variety of demanding environments.

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